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BSC0502NSIATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 26A/100A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC0502NSIATMA1
- Description：MOSFET N-CH 30V 26A/100A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：26A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.3mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：26 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1600 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 43W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-6
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC0502NSIATMA1
Single FETs, MOSFETs Overview
The BSC0502NSIATMA1 is an N-channel power MOSFET from Infineon Technologies, utilizing OptiMOS™ 5 technology. It features a maximum drain-source voltage (VDS) of 30 V and a typical gate charge (Qg) of 26 nC at 10 V. The device supports a continuous drain current (ID) of up to 100 A and offers a low on-resistance (RDS(on)) of 2.3 mΩ. Packaged in a SuperSO8 5x6 (TSON-8) surface-mount format, it operates within a temperature range of -55 °C to +150 °C with a power dissipation rating of 43 W.
Single FETs, MOSFETs Feature Summary
- OptiMOS™ 5 technology for optimized switching performance
- Low gate charge for efficient drive requirements
- Integrated monolithic Schottky-like diode
- Robust thermal management in compact package
Single FETs, MOSFETs Applications
- Synchronous rectification in DC/DC converters
- Low-side switching in motor control applications
- Power management modules requiring high efficiency
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix ATMA1 to confirm tape-and-reel packaging and quantity specifications. Ensure compatibility with the SuperSO8 5x6 footprint during PCB layout. Cross-reference the latest datasheet revision for any updates to thermal resistance or electrical limits before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring low gate charge and fast switching speeds at 30 V. The integrated body diode simplifies circuit design by eliminating external components. Consider the 43 W power dissipation limit when designing thermal solutions for high-current scenarios.
Single FETs, MOSFETs Part Context
This part belongs to the BSC0502NSI family of N-channel MOSFETs. It shares the same core die and electrical characteristics as the non-tape variant but is specifically configured for automated surface-mount assembly processes using standard reel packaging standards.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include other OptiMOS™ 5 devices with identical 30 V ratings and SuperSO8 5x6 packages. Verify pinout compatibility and thermal pad dimensions when considering alternative manufacturers.
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