BSC050N03LSGATMA1

Single FETs, MOSFETs Overview

The BSC050N03LS G is an N-channel OptiMOS™3 Power-MOSFET in a PG-TDSON-8 package. It features a drain-source voltage of 30 V and a continuous drain current of 80 A at Tc=25°C. The maximum on-resistance is 5 mΩ at Vgs=10V, with a gate threshold voltage ranging from 1 V to 2.2 V. Total gate charge is typically 26 nC at Vgs=10V. Thermal resistance junction-to-case is 2.5 K/W via the bottom pad. It supports a pulsed drain current of 320 A and operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Optimized for high efficiency in DC/DC converters and switching mode power supplies.
• Features avalanche rating capability for robust operation under transient conditions.
• Logic level gate drive compatibility ensures effective control across standard voltage ranges.
• Superior thermal performance achieved through low junction-to-case thermal resistance.

Single FETs, MOSFETs Applications

• Switching Mode Power Supplies (SMPS)
• DC/DC Converters
• Synchronous Rectification

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including the 'G' suffix against official Infineon documentation to confirm RoHS compliance and halogen-free status. Confirm that the PG-TDSON-8 footprint matches your PCB design requirements. Ensure sourcing channels provide valid traceability data consistent with JEDEC qualification standards.

Single FETs, MOSFETs Selection Notes

Select this component when a 30 V rating and high current handling are required in a compact surface-mount form factor. Evaluate the total gate charge and on-resistance product for switching loss calculations. Consider the thermal resistance specifications relative to your board's copper area and cooling strategy to ensure safe operating temperatures.

Single FETs, MOSFETs Part Context

This device belongs to the OptiMOS™3 family, designed specifically for low-voltage power applications. It utilizes advanced silicon technology to minimize conduction losses while maintaining fast switching speeds. The PG-TDSON-8 package provides efficient heat dissipation through the exposed bottom pad, suitable for dense PCB layouts.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists for verified substitutes. Generic replacements may differ in thermal characteristics or avalanche ratings. Verify pinout compatibility and electrical parameters before implementation.

Single FETs, MOSFETs FAQ

Is the BSC050N03LS G rated for avalanche energy?

Yes, the datasheet specifies single-pulse avalanche energy capabilities, allowing it to withstand specific avalanche conditions safely.

What is the maximum operating temperature for this MOSFET?

The maximum junction temperature is specified as 150°C.