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BSC050N03MSGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 16A/80A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC050N03MSGATMA1
- Description：MOSFET N-CH 30V 16A/80A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：16A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：46 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3600 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 50W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-5
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC050N03MSGATMA1
Single FETs, MOSFETs Overview
The BSC050N03MSGATMA1 is an N-channel OptiMOS™3 M-Series Power-MOSFET in a PG-TDSON-8 package. It features a drain-source voltage of 30 V and a continuous drain current of 80 A at Tc=25°C. The maximum on-resistance is 5 mΩ at VGS=10 V and 6.3 mΩ at VGS=4.5 V. Total gate charge is 34 nC (max) at VGS=10 V. It operates within a temperature range of -55°C to 150°C with a power dissipation of 50 W.
Single FETs, MOSFETs Feature Summary
- Optimized for 5V driver applications including notebooks, VGA, and point-of-load circuits
- Features low figure of merit for switching losses suitable for high-frequency SMPS
- Includes 100% avalanche testing for enhanced reliability
Single FETs, MOSFETs Applications
- Notebook power systems
- Video graphics array (VGA) circuits
- Point-of-load (POL) converters
Single FETs, MOSFETs Procurement Notes
Verify the component against the official Infineon datasheet revision 2.1 specifications. Confirm the part number suffix matches the exact PG-TDSON-8 variant. Ensure compliance with RoHS and halogen-free requirements as stated in the manufacturer documentation before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component when designing for 5V logic-level drivers requiring low on-resistance. Consider the thermal resistance characteristics and the specific gate charge values for high-frequency switching applications. Verify that the 30V rating aligns with the system's maximum voltage requirements.
Single FETs, MOSFETs Part Context
This device belongs to the OptiMOS™3 M-Series family from Infineon Technologies. It utilizes silicon technology and is designed for surface-mount installation. The series focuses on optimizing the trade-off between gate charge and on-resistance for efficient power management.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon documentation for verified substitute part numbers. Do not assume cross-compatibility with other MOSFET families without verifying pinout and electrical parameters.
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