BSC057N03MSGATMA1

$0.75

Description：MOSFET N-CH 30V 15A/71A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:8df6eaef06b1 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC057N03MSGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 15A/71A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC057N03MSGATMA1

Description：MOSFET N-CH 30V 15A/71A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：15A (Ta), 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：3100 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 45W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8-5
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC057N03MSGATMA1

BSC057N03MSGATMA1

Single FETs, MOSFETs Overview

The BSC057N03MSGATMA1 is an N-channel OptiMOS™3 M-Series Power-MOSFET in a PG-TDSON-8 package. It features a drain-source breakdown voltage of 30 V and a maximum on-resistance of 5.7 mΩ at VGS=10 V, or 7.2 mΩ at VGS=4.5 V. The device supports a continuous drain current of 71 A at TC=25°C with VGS=10 V. It includes avalanche testing and exhibits low gate charge characteristics suitable for high-frequency applications.

Single FETs, MOSFETs Feature Summary

Optimized for 5V driver applications including notebooks, VGA circuits, and point-of-load converters
Features very low on-resistance and excellent gate charge product for high-frequency SMPS efficiency
Includes monolithically integrated reverse diode with superior thermal resistance

Single FETs, MOSFETs Applications

Notebook power management systems
Video graphics array (VGA) circuits
Point-of-load (POL) converters

Single FETs, MOSFETs Procurement Notes

Verify the component status as Not Recommended for New Designs (NRND). Confirm that the specific ordering suffix matches the required tape and reel packaging format. Ensure the procurement channel provides valid traceability documentation to match the manufacturer's original specifications.

Single FETs, MOSFETs Selection Notes

Select this component when designing for 5V logic-level drivers requiring low switching losses. Evaluate the thermal performance against the specified junction-to-case resistance values. Consider the avalanche energy capability if the application involves inductive load switching scenarios.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS™3 M-Series, designed specifically for mobile and portable electronics. It utilizes silicon technology within a surface-mount PG-TDSON-8 footprint to provide compact integration for modern power management architectures.