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BSC0580NSATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC0580NSATMA1
- Description：TRENCH <= 40V
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for BSC0580NSATMA1
Single FETs, MOSFETs Overview
The BSC0580NSATMA1 is a single N-channel Power MOSFET from Infineon Technologies, utilizing OptiMOS technology. It features a drain-source breakdown voltage (Vds) of 30 V and a continuous drain current (Id) of 186 A. The device exhibits a maximum on-resistance (Rds(on)) of 5.8 mΩ at a gate-source voltage of 10 V. It operates within a temperature range of -55°C to +175°C and is housed in a TDSON-8 surface-mount package.
Single FETs, MOSFETs Feature Summary
- OptiMOS technology integration for optimized switching performance
- Low thermal resistance structure for efficient heat dissipation
- Lead-free packaging compliant with RoHS standards
Single FETs, MOSFETs Applications
- Industrial motor control systems
- DC-DC converter circuits
- Power management modules
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'MA1' against official Infineon documentation to confirm tape and reel specifications. Ensure the TDSON-8 footprint matches the target PCB design. Cross-reference the datasheet revision date to validate electrical parameters before finalizing component selection.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high current handling at low voltage levels. The 30 V rating suits 24 V or 12 V systems. Evaluate thermal management requirements based on the 186 A current capability and package power dissipation limits. Confirm gate drive compatibility with the specified threshold voltage characteristics.
Single FETs, MOSFETs Part Context
This part belongs to the Infineon OptiMOS family, designed for high-efficiency power switching. The BSC0580NSATMA1 variant specifically targets low-voltage, high-current industrial and consumer applications where compact surface-mount solutions are required.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon substitution guides for verified equivalents. Generic cross-references may not match the specific Rds(on) or thermal characteristics of the OptiMOS technology.
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