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BSC0588NSIATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is BSC0588- N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC0588NSIATMA1
- Description：BSC0588- N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Infineon Technologies
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for BSC0588NSIATMA1
Single FETs, MOSFETs Overview
The BSC0588NSIATMA1 is an N-channel Power MOSFET from Infineon Technologies, part of the OptiMOS 5 series. It utilizes Source-Down PQFN technology for enhanced thermal performance. Key electrical parameters include a drain-source voltage (V_DSS) of 30 V and a continuous drain current (I_D) of 215 A at 25°C. The device features a maximum on-resistance (R_DS(on)) of 0.7 mΩ at V_GS = 10 V. It operates within a junction temperature range of -55°C to +175°C and is housed in a PG-TDFEX-8 package.
Single FETs, MOSFETs Feature Summary
- OptiMOS 5 technology optimized for low conduction and switching losses
- Source-Down PQFN package design enabling efficient bottom-side cooling
- Enhanced thermal dissipation through direct silicon-to-PCB connection
Single FETs, MOSFETs Applications
- Server power supply units (PSU)
- Telecommunications infrastructure AC-DC conversion
- Battery management systems (BMS)
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix ATMA1 to confirm tape-and-reel packaging configuration. Ensure compatibility with the PG-TDFEX-8 footprint during PCB layout. Cross-reference official datasheets for absolute maximum ratings before integration into high-current designs.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high current density in compact form factors. The Source-Down architecture offers superior thermal resistance compared to standard packages. Evaluate gate charge requirements against driver capabilities to optimize switching efficiency in power conversion circuits.
Single FETs, MOSFETs Part Context
This device belongs to Infineon's OptiMOS 5 family, which integrates advanced trench gate technology. The Source-Down variant specifically addresses thermal bottlenecks in dense power electronics by flipping the silicon die. This design allows the source potential to connect directly to the PCB thermal pad.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes may include other OptiMOS 5 devices with similar R_DS(on) and V_DSS ratings in the same package, such as BSC0501NSIATMA1, provided pinout and thermal characteristics match the application requirements.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
