ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
BSC060N10NS3GATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 14.9/90A 8TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC060N10NS3GATMA1
- Description：MOSFET N-CH 100V 14.9/90A 8TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：14.9A (Ta), 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：6mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs：68 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4900 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：125W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-1
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC060N10NS3GATMA1
Single FETs, MOSFETs Overview
The BSC060N10NS3GATMA1 is an N-channel Power MOSFET from Infineon's OptiMOS 3 family, housed in a TDSON-8 surface-mount package. It features a drain-source voltage rating of 100 V and a continuous drain current of 90 A at 25°C. The device exhibits a maximum on-resistance of 5.3 mΩ at 10 V gate drive. Key electrical parameters include a gate charge of 68 nC, threshold voltage of 2 V, and power dissipation capability of 125 W. Operating temperatures range from -55°C to +150°C, with rise and fall times of 16 ns and 12 ns respectively.
Single FETs, MOSFETs Feature Summary
- Optimized low on-resistance for high efficiency
- Enhanced switching performance characteristics
- Low gate charge for reduced driving losses
Single FETs, MOSFETs Applications
- Synchronous rectification in AC-DC SMPS
- Motor control in 48V-80V systems
- Isolated DC-DC converters for data communication
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix GATMA1 against the manufacturer datasheet to confirm tape-and-reel packaging and quantity specifications. Ensure component authenticity through authorized distribution channels. Confirm RoHS compliance status and material content declarations prior to integration into final assemblies.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high current handling within a compact TDSON-8 footprint. Evaluate thermal management requirements based on the 125 W power dissipation rating. Consider the 5.3 mΩ on-resistance impact on conduction losses relative to system efficiency targets.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS 3 generation of silicon power MOSFETs designed for high-density power conversion applications. The technology focuses on minimizing figure-of-merit values through simultaneous optimization of on-resistance and gate charge parameters.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with BSC070N10NS3GATMA1 for similar 100V/90A specifications. Verify pinout compatibility and thermal resistance differences before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
