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BSC061N08NS5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 80V 82A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC061N08NS5ATMA1
- Description：MOSFET N-CH 80V 82A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：82A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：6.1mOhm @ 41A, 10V
- Vgs(th) (Max) @ Id：3.8V @ 41µA
- Gate Charge (Qg) (Max) @ Vgs：33 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2500 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 74W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-7
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC061N08NS5ATMA1
Single FETs, MOSFETs Overview
The BSC061N08NS5 is an N-channel OptiMOS™ 5 power transistor with a drain-source voltage of 80 V. It features a maximum on-state resistance of 6.1 mΩ and a continuous drain current of 82 A at 25°C case temperature. The device operates within a junction temperature range of -55°C to 150°C. Key dynamic parameters include a total gate charge of 27 nC and an output charge of 33 nC. It utilizes a PG-TDSON-8 package.
Single FETs, MOSFETs Feature Summary
- Optimized for high-performance synchronous rectification in switch-mode power supplies
- Features superior thermal resistance characteristics
- Subjected to 100% avalanche testing
Single FETs, MOSFETs Applications
- Synchronous rectification in switch-mode power supplies
- Telecommunications applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code against the manufacturer's official documentation to ensure correct component identification. Confirm that the required package variant matches the PG-TDSON-8 specification. Ensure compliance with RoHS and halogen-free requirements as stated in the datasheet before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component when an 80 V rating and low on-resistance are required for synchronous rectification. Consider the thermal performance and package size relative to the application's cooling constraints. Evaluate the gate charge and switching times against the target switching frequency to ensure optimal efficiency and drive compatibility.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS™ 5 family, designed for high-efficiency power conversion. It represents an evolution in silicon technology aimed at reducing conduction and switching losses. The series targets demanding applications requiring robust performance in compact surface-mount packages.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon cross-reference documents for verified substitutes. Do not assume functional equivalence based solely on voltage or current ratings.
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