BSC065N06LS5ATMA1

$1.47

Description：MOSFET N-CHANNEL 60V 64A 8TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:19663b662081 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC065N06LS5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CHANNEL 60V 64A 8TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC065N06LS5ATMA1

Description：MOSFET N-CHANNEL 60V 64A 8TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6.5mOhm @ 32A, 10V
Vgs(th) (Max) @ Id：2.3V @ 20µA
Gate Charge (Qg) (Max) @ Vgs：13 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1800 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：46W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8-6
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC065N06LS5ATMA1

BSC065N06LS5ATMA1

Single FETs, MOSFETs Overview

The BSC065N06LS5ATMA1 is a single N-channel OptiMOS power transistor with a 60 V drain-source breakdown voltage. It features a maximum on-state resistance of 6.5 mΩ and supports a continuous drain current of 64 A at 25°C case temperature. The device utilizes a PG-TDSON-8 (SuperSO8) surface-mount package. Key dynamic parameters include a total gate charge of 10 nC and an output charge of 19 nC. It operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Logic-level N-channel architecture optimized for synchronous rectification in high-performance switching power supplies.
Superior thermal resistance characteristics enabled by the SuperSO8 package design.
100% avalanche tested to ensure robustness against inductive load switching events.

Single FETs, MOSFETs Applications

Synchronous rectification in high-performance switch-mode power supplies
Target applications qualified according to JEDEC standards

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the ordering suffix matches the required tape-and-reel packaging specifications. Ensure compliance with RoHS directives and halogen-free requirements as stated in the datasheet before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when low RDS(on) and fast switching speeds are critical for efficiency. The logic-level gate drive capability allows compatibility with standard control voltages. Consider the thermal management requirements associated with the PG-TDSON-8 package for high-current applications.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS family, representing Infineon's advanced trench MOSFET technology. It is designed to minimize conduction and switching losses. The specific model integrates a built-in body diode suitable for half-bridge configurations.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 60V rating, 6.5mΩ max RDS(on), and PG-TDSON-8 package. Verify pinout compatibility and thermal resistance values before implementation.