BSC067N06LS3GATMA1

Single FETs, MOSFETs Overview

The BSC067N06LS3GATMA1 is an N-channel OptiMOS™ 3 power transistor with a 60 V drain-source breakdown voltage. It features a maximum on-resistance of 6.7 mΩ at VGS=10 V and ID=50 A, and logic-level operation at VGS=4.5 V. The device supports a continuous drain current of 79 A at TC=25 °C and includes an internal body diode. Packaged in PG-TDSON-8 (SuperSO8), it offers optimized thermal resistance for high-frequency switching applications.

Single FETs, MOSFETs Feature Summary

• Optimized technology specifically designed for DC/DC converters and synchronous rectification
• Excellent gate charge x RDS(on) figure of merit combined with very low on-resistance
• Superior thermal resistance characteristics within the SuperSO8 package
• Logic level compatible N-channel configuration suitable for direct drive

Single FETs, MOSFETs Applications

• High frequency switching circuits
• Synchronous rectification
• DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the component against the official Infineon datasheet Rev. 2.5 to confirm electrical parameters and pinout compatibility. Ensure that the ordering code matches the specific tape-and-reel packaging requirements for automated assembly processes. Cross-reference the RoHS compliance status and lead-free plating specifications with current regulatory standards before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing power stages requiring low conduction losses and efficient thermal management in compact footprints. The logic-level threshold allows for direct interfacing with standard logic controllers without additional gate drive circuitry. Evaluate the avalanche energy rating and safe operating area curves to ensure robustness under transient load conditions and inductive switching scenarios.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™ 3 family from Infineon Technologies, engineered for enhanced performance in power conversion systems. The PG-TDSON-8 package provides a balance between current handling capability and board space efficiency. It represents a generation of silicon MOSFETs focused on minimizing switching losses while maintaining high reliability in consumer and industrial power supply designs.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon documentation for verified substitute part numbers. Do not assume functional equivalence based solely on voltage and current ratings.