BSC0702LSATMA1

Single FETs, MOSFETs Overview

The BSC0702LSATMA1 is an N-channel OptiMOS low-voltage power MOSFET manufactured by Infineon Technologies. It features a PQFN 3.3 x 3.3 mm surface-mount package with eight pins. The device supports a maximum drain-source voltage of 60 V and a continuous drain current of 40 A at 25°C, with a pulsed current rating of 160 A. Key electrical parameters include a typical gate charge of 18 nC at 4.5 V and a maximum on-resistance of 4 mΩ at 10 V gate drive, or 5.6 mΩ at 4.5 V. Thermal performance is characterized by a junction-to-case thermal resistance of 1.8 K/W and a junction-to-ambient resistance of 60 K/W. The component operates within a temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• Optimized for high-frequency switching applications in power delivery systems
• Integrated body diode with low forward voltage characteristics
• Enhanced thermal dissipation via compact PQFN footprint

Single FETs, MOSFETs Applications

• Power delivery circuits for mobile chargers and adapters
• Synchronous rectification in DC-DC converters
• Low-side switching in battery management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix ATMA1 against official Infineon documentation to confirm reel packaging specifications and tape-and-reel dimensions. Ensure that the requested quantity aligns with standard manufacturing lot sizes. Cross-reference the full part number with the latest datasheet revision to validate any updates to mechanical drawings or compliance certifications prior to finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when design requirements prioritize low on-resistance and fast switching speeds within a minimal board area constraint. The 60 V rating suits low-voltage bus architectures. Evaluate the 1.8 K/W junction-to-case thermal resistance against the system's heat sink or PCB copper pour capabilities to ensure adequate thermal management under continuous load conditions without exceeding the maximum junction temperature limit.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS family of power transistors, which utilizes Infineon's proprietary trench technology to achieve superior figure-of-merit values compared to standard planar MOSFETs. The OptiMOS series is specifically engineered for efficiency-critical applications where minimizing conduction losses and switching energy is paramount. The PQFN package provides a robust mechanical solution for high-power density designs.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.