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BSC0703LSATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 15A/64A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC0703LSATMA1
- Description：MOSFET N-CH 60V 15A/64A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：15A (Ta), 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6.5mOhm @ 32A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs：13 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1800 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 46W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-6
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC0703LSATMA1
Single FETs, MOSFETs Overview
The BSC0703LS is a 60 V N-channel OptiMOS power transistor in PG-TDSON-8 packaging. Key parameters include a maximum drain-source on-state resistance of 6.5 mΩ, continuous drain current of 64 A at TC=25°C, and pulsed drain current of 256 A. Gate charge (QG) is 10 nC typical at VGS=4.5V. Thermal resistance junction-to-case is 1.6 K/W typical. It operates within -55°C to 150°C.
Single FETs, MOSFETs Feature Summary
- Optimized for high-frequency switching applications
- Logic-level gate drive capability
- Superior thermal resistance characteristics
- 100% avalanche tested for reliability
Single FETs, MOSFETs Applications
- Charger designs
- High-frequency switching circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code matches the required package variant. Confirm compliance with RoHS and halogen-free standards as stated in the datasheet. Ensure the application environment respects the specified operating temperature range and thermal management requirements for the TDSON-8 package.
Single FETs, MOSFETs Selection Notes
Select this component for low-voltage, high-current applications requiring efficient logic-level control. The low gate charge supports fast switching speeds. Evaluate thermal performance based on the PCB cooling area specifications provided in the thermal characteristics section.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's OptiMOS family, specifically designed for power transistor applications. It utilizes advanced silicon technology to achieve low on-resistance and high efficiency in compact surface-mount packages suitable for modern electronic designs.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference tools for verified substitutes. Ensure any replacement maintains compatible voltage ratings, current capabilities, and package dimensions.
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