BSC070N10NS3GATMA1

Single FETs, MOSFETs Overview

The BSC070N10NS3GATMA1 is an N-channel enhancement-mode power MOSFET from Infineon's OptiMOS 3 series. It features a TDSON-8 surface-mount package with dimensions of 5x6 mm. Key electrical parameters include a maximum drain-source voltage (Vds) of 100 V and a continuous drain current (Id) of 90 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 7 mΩ at Vgs=10V, with a typical gate charge (Qg) of 42 nC. It supports a junction temperature range from -55°C to 150°C and offers a maximum power dissipation of 114 W.

Single FETs, MOSFETs Feature Summary

• Optimized for high efficiency and power density in switching applications through low Rds(on) and excellent figure-of-merit performance.
• Features very low gate charge (Qg) and gate-drain charge (Qgd) to minimize switching losses and drive requirements.
• Designed with robust thermal characteristics suitable for compact surface-mount layouts.

Single FETs, MOSFETs Applications

• Synchronous rectification in AC-DC switch-mode power supplies (SMPS)
• Motor control systems for 48V-80V applications such as electric vehicles and power tools
• Isolated DC-DC converters for telecommunications and data communication equipment

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including the ATMA1 suffix to ensure correct tape-and-reel packaging configuration. Confirm RoHS compliance and halogen-free status against specific project requirements. Cross-reference the datasheet revision date to ensure alignment with latest thermal and electrical specifications before finalizing design integration.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a balance of low conduction loss and fast switching speeds in a compact TDSON-8 footprint. Evaluate thermal management needs based on the 1.1 K/W junction-to-case thermal resistance. Ensure gate drive voltages remain within the specified limits to maintain optimal Rds(on) performance without exceeding maximum ratings.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS 3 family, representing a generation of silicon power MOSFETs optimized for general-purpose power conversion. It serves as a successor or alternative to older TO-220 packages by offering similar electrical performance in a significantly smaller surface-mount form factor, facilitating higher circuit board density.

Single FETs, MOSFETs Replacement Considerations

Direct pin-compatible replacements within the same package may include other OptiMOS 3 variants with matching or lower Rds(on), such as BSC070N10NS5 series devices, provided voltage and current ratings are sufficient. Verify thermal resistance and gate charge differences when substituting.