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BSC076N06NS3GATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 50A TDSON-8. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC076N06NS3GATMA1
- Description：MOSFET N-CH 60V 50A TDSON-8
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7.6mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：4V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs：50 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4000 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 69W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-5
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC076N06NS3GATMA1
Single FETs, MOSFETs Overview
The BSC076N06NS3GATMA1 is a single N-channel Power MOSFET from Infineon's OptiMOS 3 series, housed in a TDSON-8 surface-mount package. It features a drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 50 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 6.2 mΩ at Vgs = 10 V. Key switching parameters include a gate charge (Qg) of 50 nC, with rise and fall times of 40 ns and 5 ns respectively. It supports a power dissipation of 69 W and operates within a junction temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- OptiMOS 3 technology provides low on-resistance for high efficiency.
- Enhanced avalanche ruggedness for robust operation.
- Lead-free packaging compliant with RoHS standards.
Single FETs, MOSFETs Applications
- Motor control applications
- DC-DC converter circuits
- High-side and low-side switching
Single FETs, MOSFETs Procurement Notes
Verify the complete part number including the ATMA1 suffix against official Infineon documentation to ensure correct tape-and-reel packaging specifications. Confirm that the component meets specific automotive or industrial qualification requirements if applicable to your design. Cross-reference datasheet revisions to ensure parameter consistency during procurement.
Single FETs, MOSFETs Selection Notes
Select this component when a 60 V rating and approximately 50 A continuous current capability are required in a compact TDSON-8 footprint. The 6.2 mΩ Rds(on) offers a balance between conduction loss and cost. Ensure thermal management solutions account for the 69 W power dissipation rating under expected operating conditions.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS 3 family, designed for general-purpose power switching. It utilizes silicon technology to deliver reliable performance in various electronic systems. The TDSON-8 package facilitates automated assembly and efficient heat dissipation compared to traditional through-hole options.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes may include other Infineon OptiMOS 3 devices with similar voltage and current ratings, such as the BSC070N10NS3GATMA1 (100V variant), provided the higher voltage rating does not compromise circuit compatibility. Verify pinout and thermal characteristics before substitution.
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