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BSC079N03LSCGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 14A/50A TDSON. Review the specifications below when checking this part for your BOM.
The BSC079N03LSC G is an N-channel OptiMOS™3 Power-MOSFET in a PG-TDSON-8 package. It features a maximum drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of 50 A at TC=25 °C. The maximum on-resistance (RDS(on)) is 7.9 mΩ at VGS=10 V and 12.7 mΩ at VGS=4.5 V. Gate threshold voltage ranges from 1 V to 2.2 V. Total gate charge (Qg) is typically 6.8 nC. Power dissipation is 30 W at TC=25 °C, with a junction temperature range of -55 °C to +150 °C.
Verify the component marking '079N03LS' against the datasheet to confirm authenticity. Ensure the ordering suffix matches the required tape and reel specifications. Confirm RoHS compliance and halogen-free status according to IEC61249-2-21 standards during procurement validation.
Select this component for applications requiring low on-resistance and fast switching speeds within a 30 V system. Consider the thermal resistance characteristics and power dissipation limits relative to the specific PCB cooling area requirements. Evaluate the logic level gate drive compatibility for efficient control circuit integration.
This device belongs to Infineon's OptiMOS™3 series, designed for high-efficiency power management. It utilizes advanced trench technology to minimize conduction losses while maintaining robust switching performance. The PG-TDSON-8 package provides excellent thermal dissipation capabilities suitable for compact surface-mount designs.
BSC079N03LSCGATMA1
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