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BSC082N10LSGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 13.8A 8TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC082N10LSGATMA1
- Description：MOSFET N-CH 100V 13.8A 8TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：13.8A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8.2mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 110µA
- Gate Charge (Qg) (Max) @ Vgs：104 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：7400 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：156W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-1
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC082N10LSGATMA1
Single FETs, MOSFETs Overview
The BSC082N10LSGATMA1 is an N-Channel Power MOSFET from Infineon Technologies, part of the OptiMOS family. It features a drain-source voltage (Vds) of 100 V and a continuous drain current (Id) of 13.8 A at case temperature (Ta), or 100 A at case temperature (Tc). The device has a maximum on-resistance (Rds(on)) of 8.2 mΩ. It operates within a junction temperature range of -55°C to +150°C and offers a power dissipation of 156 W at Tc. The component utilizes a PG-TDSON-8 surface mount package.
Single FETs, MOSFETs Feature Summary
- Utilizes OptiMOS technology for optimized switching performance
- Designed for high-performance applications requiring low conduction losses
- Single N-Channel configuration with enhancement mode operation
Single FETs, MOSFETs Applications
- High-efficiency DC-DC converters
- Motor control circuits
- Power supply output stages
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized distributors. Confirm RoHS compliance status via official datasheets. Check for end-of-life notices as availability may be limited. Ensure storage conditions meet manufacturer specifications to prevent damage. Validate package markings against official documentation.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring 100 V blocking capability and low Rds(on). Consider thermal management requirements due to 156 W power dissipation rating. Evaluate gate charge characteristics for switching frequency optimization. Compare package dimensions against PCB layout constraints.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's OptiMOS portfolio, designed for efficient power switching. It serves as a single N-Channel MOSFET in the TDSON-8 package. The series focuses on reducing conduction and switching losses for improved system efficiency.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes such as BSC014N10LS5ATMA1 or BSC034N10LS5ATMA1 if higher current ratings are needed. Verify pin compatibility and thermal characteristics before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
