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BSC085N025S G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 25V 14A/35A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC085N025S G
- Description：MOSFET N-CH 25V 14A/35A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：14A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8.5mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id：2V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1800 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.8W (Ta), 52W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-1
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC085N025S G
Single FETs, MOSFETs Overview
The BSC085N025S G is an OptiMOS™2 N-channel power MOSFET in a PG-TDSON-8 package. It features a drain-source voltage of 25 V and a maximum on-resistance of 8.5 mΩ at VGS=10 V. The device supports a continuous drain current of 35 A and a pulsed current of 140 A. Key electrical parameters include a gate threshold voltage range of 1.2 V to 2 V, total gate charge of 11 nC, and input capacitance of 1350 pF. Thermal resistance from junction to case is 2.4 K/W.
Single FETs, MOSFETs Feature Summary
- Optimized for notebook DC/DC converters and switching mode power supplies
- Avalanche rated with dv/dt capability up to 6 kV/µs
- Logic level operation with excellent gate charge x RDS(on) figure of merit
- Superior thermal resistance and Pb-free lead plating
Single FETs, MOSFETs Applications
- Notebook DC/DC converters
- Switching mode power supplies (SMPS)
- Target applications qualified according to JEDEC standards
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix and revision status directly with Infineon Technologies or authorized distributors before procurement. Confirm that the component meets all required environmental compliance standards, including RoHS and halogen-free specifications, as well as JEDEC qualification requirements for the intended application environment.
Single FETs, MOSFETs Selection Notes
Select this component for low-voltage, high-current applications requiring fast switching speeds. Ensure the design accommodates the 25 V drain-source voltage limit and utilizes the PG-TDSON-8 package's thermal characteristics. Consider the avalanche rating and dv/dt capabilities when designing circuits subject to transient conditions or inductive load switching.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS™2 family of power transistors designed by Infineon Technologies. It is specifically engineered to provide high efficiency and reliability in portable electronics and power conversion systems. The technology focuses on minimizing conduction losses while maintaining robust switching performance within a compact surface-mount footprint.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon documentation for verified replacement part numbers. Do not substitute based solely on pin compatibility without confirming electrical parameter alignment.
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