BSC0901NSIATMA1

Single FETs, MOSFETs Overview

The BSC0901NSIATMA1 is an N-channel power MOSFET from Infineon's OptiMOS family, housed in a TDSON-8 surface-mount package. It features a drain-source voltage rating of 30 V and a continuous drain current capacity of 100 A at 25°C. The device exhibits a maximum on-resistance of 1.6 mΩ at 10 V gate drive. Key electrical parameters include a gate charge of 44 nC, a threshold voltage of 1.2 V, and a power dissipation capability of 69 W. Operating temperatures range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Monolithically integrated Schottky-like diode for synchronous rectification applications
• OptiMOS technology providing low on-resistance and high switching efficiency
• Enhanced thermal performance with a junction-to-case thermal resistance of 1.8 K/W

Single FETs, MOSFETs Applications

• Motor control systems
• Switch-mode power supplies (SMPS)
• Automotive electronic modules

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix ATMA1 against official datasheets to confirm packaging details such as reel dimensions or tape specifications. Ensure the component meets RoHS compliance requirements for your target market. Cross-reference the part number with Infineon's official documentation to validate the exact pinout and thermal pad configuration before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 30 V N-channel MOSFET with high current handling is required in a compact TDSON-8 footprint. The integrated body diode makes it suitable for half-bridge configurations. Consider the 1.6 mΩ on-resistance for conduction loss calculations and verify that the 100 A current rating aligns with the system's peak load requirements under specified thermal conditions.

Single FETs, MOSFETs Part Context

This part belongs to the BSC0901NS series within Infineon's OptiMOS portfolio. It shares the same core die and electrical characteristics as the BSC0901NSI variant but differs in packaging and ordering suffixes. The series is designed for automotive and industrial applications requiring robust performance in low-voltage environments.

Single FETs, MOSFETs Replacement Considerations

The BSC0901NSI is a direct functional equivalent with identical electrical specifications. Verify that the SuperSO8 5x6 package of the NSI variant fits the PCB layout constraints if substituting for the TDSON-8 package of the NSIATMA1.