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BSC0902NSIATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 23A/100A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC0902NSIATMA1
- Description：MOSFET N-CH 30V 23A/100A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：23A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.8mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs：32 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1500 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 48W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-6
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC0902NSIATMA1
Single FETs, MOSFETs Overview
The BSC0902NSIATMA1 is an N-channel OptiMOS Power-MOSFET with a 30 V drain-source voltage rating. It features a maximum on-resistance of 2.8 mΩ at VGS=10V and supports a continuous drain current of 100 A at TC=25°C. The device includes a monolithically integrated Schottky-like diode and exhibits a total gate charge of 24 nC (0V to 10V). Packaged in PG-TDSON-8, it offers a thermal resistance from junction to case of 2.6 K/W.
Single FETs, MOSFETs Feature Summary
- Optimized for high-performance buck converter applications
- Features a monolithically integrated Schottky-like diode
- Provides very low on-resistance at VGS=4.5 V
- Qualified according to JEDEC standards
Single FETs, MOSFETs Applications
- High-performance synchronous buck converters
- DC-DC power conversion modules
- Automotive electronic control units
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code suffix ATMA1 against official Infineon documentation to confirm reel packaging specifications. Ensure that the component meets RoHS compliance and halogen-free requirements as stated in the datasheet before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring low RDS(on) at logic-level gate voltages. Consider the integrated Schottky-like diode for synchronous rectification needs. Evaluate the thermal resistance characteristics relative to the PCB copper area to ensure adequate heat dissipation within the specified operating temperature range.
Single FETs, MOSFETs Part Context
This part belongs to the Infineon OptiMOS Power-MOSFET family, specifically designed for automotive and industrial applications. It utilizes advanced silicon technology to achieve superior thermal performance and switching efficiency compared to standard MOSFETs in similar voltage classes.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon cross-reference lists for verified substitutes. Do not assume compatibility based solely on electrical parameters; verify package dimensions and pinout configurations.
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