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BSC0904NSIATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 20A/78A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC0904NSIATMA1
- Description：MOSFET N-CH 30V 20A/78A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：20A (Ta), 78A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.7mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1100 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 37W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-6
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC0904NSIATMA1
Single FETs, MOSFETs Overview
The BSC0904NSIATMA1 is an N-channel OptiMOS Power-MOSFET with a 30 V drain-source voltage rating. It features a maximum on-resistance of 3.7 mΩ at VGS=10V and 5.2 mΩ at VGS=4.5V, supporting a continuous drain current of 78 A at TC=25°C. The device includes a monolithically integrated Schottky-like diode with a forward current of 37 A. Total gate charge is 17 nC at VGS=10V and 8.5 nC at VGS=4.5V. Thermal resistance from junction to case is 3.4 K/W. Operating temperature ranges from -55°C to 150°C.
Single FETs, MOSFETs Feature Summary
- Optimized for high-performance buck converter applications as a synchronous FET
- Features a monolithically integrated Schottky-like diode for improved switching performance
- Provides superior thermal resistance characteristics
- Subjected to 100% avalanche testing
Single FETs, MOSFETs Applications
- High-performance buck converters
- Synchronous rectification circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code suffix ATMA1 against official Infineon documentation to confirm packaging details and reel specifications. Ensure component authenticity through authorized distribution channels. Confirm that the PG-TDSON-8 package dimensions align with the target PCB layout requirements before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring low RDS(on) at both 10V and 4.5V gate drive levels. The integrated Schottky-like diode reduces external component count in synchronous topologies. Evaluate thermal management strategies based on the 3.4 K/W junction-to-case resistance for high-current applications.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS family of power MOSFETs from Infineon Technologies. It utilizes the PG-TDSON-8 (SuperSO8) surface-mount package. The device is designed for efficient power switching in automotive and industrial environments, characterized by low gate charge and robust avalanche capability.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon replacement guides for verified substitutes. Cross-reference parameters such as RDS(on), Qg, and package dimensions when evaluating alternative components.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
