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BSC090N03MSGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 12A/48A 8TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC090N03MSGATMA1
- Description：MOSFET N-CH 30V 12A/48A 8TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta), 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：24 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1900 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 32W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-5
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC090N03MSGATMA1
Single FETs, MOSFETs Overview
The BSC090N03MSGATMA1 is an N-channel OptiMOS™3 M-Series power MOSFET in a PG-TDSON-8 package. It features a maximum drain-source voltage of 30 V and a continuous drain current of 48 A at 25 °C. The device offers a maximum on-resistance of 9 mΩ at VGS=10 V and 11.2 mΩ at VGS=4.5 V. Total gate charge is typically 18 nC at 10 V and 8.9 nC at 4.5 V. Power dissipation reaches 32 W at 25 °C, with a thermal resistance (junction-to-case) of 3.9 K/W.
Single FETs, MOSFETs Feature Summary
- Optimized for 5V driver applications including notebooks, VGA, and point-of-load converters
- Features low figure of merit for switching loss to support high-frequency SMPS designs
- Includes monolithic integrated Schottky-like diode with avalanche testing
Single FETs, MOSFETs Applications
- Notebook power systems
- Video graphics array (VGA) circuits
- Point-of-load (POL) converters
Single FETs, MOSFETs Procurement Notes
Verify the component against official Infineon datasheet revision 2.1 specifications. Confirm the part number includes the ATMA1 suffix for tape and reel packaging. Ensure compatibility with PG-TDSON-8 footprints and validate thermal requirements against the 3.9 K/W junction-to-case rating.
Single FETs, MOSFETs Selection Notes
Select this component for 30 V logic-level applications requiring low conduction losses at 4.5 V drive voltages. The optimized gate charge supports efficient operation in synchronous rectification topologies. Evaluate PCB copper area constraints as thermal performance depends on the specified 6 cm² cooling area.
Single FETs, MOSFETs Part Context
This part belongs to the Infineon OptiMOS™3 M-Series, designed specifically for low-voltage, high-current applications. It utilizes advanced trench technology to minimize on-resistance while maintaining robust gate oxide reliability. The series targets portable electronics where space efficiency and thermal management are critical.
Single FETs, MOSFETs Replacement Considerations
Check pinout compatibility with existing PG-TDSON-8 layouts. Verify that substitute parts meet the 30 V breakdown and 48 A current ratings. Ensure replacement devices offer comparable RDS(on) values at 4.5 V to maintain system efficiency.
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