BSC091N03MSCGATMA1

Single FETs, MOSFETs Overview

The BSC091N03MSCGATMA1 is a single N-channel power MOSFET from Infineon Technologies, utilizing OptiMOS 3 M-Series technology. It features a PG-TDSON-8-6 surface-mount package with a drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 12 A at ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 9.1 mΩ at 30 A and 10 V gate drive. It operates within a junction temperature range of -55 °C to +150 °C and is designed for low-voltage applications requiring efficient switching.

Single FETs, MOSFETs Feature Summary

• Optimized for 5 V gate drive compatibility in notebook CPU VRMs and VGA power stages
• Integrates monolithic Schottky-like diode functionality
• Utilizes OptiMOS 3 M-Series silicon technology for enhanced efficiency

Single FETs, MOSFETs Applications

• Notebook CPU Voltage Regulator Modules (VRMs)
• VGA power supply circuits
• Low-voltage DC-DC conversion systems

Single FETs, MOSFETs Procurement Notes

Verify the component status as active before integration into new designs. Confirm that the specific ordering suffix matches the required tape-and-reel packaging configuration. Ensure that the thermal management design accounts for the specified power dissipation limits under expected operating conditions. Cross-reference the datasheet version to confirm parameter consistency.

Single FETs, MOSFETs Selection Notes

Select this component when a 30 V N-channel MOSFET with optimized 5 V logic-level gate drive is required. It is suitable for applications prioritizing low conduction losses in compact surface-mount footprints. Consider the trade-off between the 12 A continuous current rating and the 9.1 mΩ on-resistance for thermal performance requirements in space-constrained mobile electronics.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS 3 M-Series family, which targets low-voltage power switching applications. It shares the TDSON-8-6 package form factor with other high-current variants but is specifically tuned for lower gate charge and faster switching speeds compared to standard series devices. The series emphasizes cost-performance balance for consumer electronics power stages.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include BSC030N03MSGATMA1 and BSC0901NSATMA1, though these offer higher current ratings and different on-resistance characteristics. Verify pinout compatibility and thermal resistance values when substituting to ensure circuit stability.