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BSC096N10LS5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 40A TDSON-8-6. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC096N10LS5ATMA1
- Description：MOSFET N-CH 100V 40A TDSON-8-6
- Series：OptiMOS™ 5
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：9.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 36µA
- Gate Charge (Qg) (Max) @ Vgs：14.6 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2100 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta), 83W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-6
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC096N10LS5ATMA1
Single FETs, MOSFETs Overview
The BSC096N10LS5ATMA1 is an OptiMOS™ 5 power transistor featuring a 100 V drain-source breakdown voltage and a maximum on-state resistance of 9.6 mΩ at VGS=10 V. It supports a continuous drain current of 72 A at TC=25 °C and delivers a pulsed current capability of 287 A. The device utilizes a PG-TDSON-8 package with a thermal resistance from junction to case of 1.1 °C/W. Key dynamic parameters include a total gate charge of 14.6 nC and an output charge of 30 nC.
Single FETs, MOSFETs Feature Summary
- Logic-level N-channel design optimized for high-frequency switching applications
- Superior thermal resistance characteristics within the SuperSO8 footprint
- Fully qualified according to JEDEC standards for industrial applications
- 100% avalanche tested for enhanced reliability under transient conditions
Single FETs, MOSFETs Applications
- Charger designs
- Industrial applications requiring high-frequency switching
- Power conversion systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code suffix against official Infineon documentation to ensure correct packaging and marking configurations. Confirm that the component meets RoHS compliance and halogen-free requirements as specified in the datasheet. Cross-reference the product qualification report to validate suitability for intended industrial environments before finalizing procurement decisions.
Single FETs, MOSFETs Selection Notes
Select this component when a 100 V rating and low RDS(on) are required within a compact surface-mount form factor. Consider the 72 A continuous current limit and thermal derating curves for PCB layout planning. Evaluate the gate charge specifications against driver capabilities to optimize switching performance and minimize losses in high-frequency operation scenarios.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS™ 5 family, representing advanced silicon technology for power MOSFETs. It is designed to replace previous generations by offering improved thermal performance and switching efficiency. The PG-TDSON-8 package provides a robust solution for space-constrained designs while maintaining high power dissipation capabilities.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference tools for compatible alternatives. Verify pinout compatibility and thermal characteristics when substituting similar 100 V N-channel devices.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
