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BSC097N06NSATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 46A TDSON-8-6. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC097N06NSATMA1
- Description：MOSFET N-CH 60V 46A TDSON-8-6
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：9.7mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id：3.3V @ 14µA
- Gate Charge (Qg) (Max) @ Vgs：15 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1075 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 36W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-6
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC097N06NSATMA1
Single FETs, MOSFETs Overview
The BSC097N06NSATMA1 is an N-channel OptiMOS™ power transistor with a 60 V drain-source breakdown voltage. It features a maximum on-state resistance of 9.7 mΩ at 10 V gate drive and supports a continuous drain current of 48 A at 25 °C. The device utilizes a PG-TDSON-8 package, offering a thermal resistance from junction to case bottom of 3.5 K/W. It operates within a temperature range of -55 °C to 175 °C and includes an internal body diode.
Single FETs, MOSFETs Feature Summary
- Fully qualified according to JEDEC standards for industrial applications
- Features superior thermal resistance optimized for high-performance synchronous rectification in SMPS
- Includes 100% avalanche testing capability
Single FETs, MOSFETs Applications
- High-performance synchronous rectification in switch-mode power supplies (SMPS)
- Industrial electronic circuits requiring robust thermal performance
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code suffix against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets all required environmental compliance standards, including RoHS and REACH directives, prior to final procurement decisions.
Single FETs, MOSFETs Selection Notes
Select this component when designing systems requiring low conduction losses and high current handling capabilities within a compact surface-mount footprint. Ensure the application environment allows for adequate heat dissipation to maintain junction temperatures within the specified 175 °C limit during operation.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS™ Power Transistor family, specifically designed for differentiated MOSFET applications. It represents a silicon-based enhancement mode device intended for efficient power switching solutions in modern electronic architectures.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon cross-reference lists for verified substitutes. Do not assume functional equivalence with other 60V N-channel MOSFETs without verifying pinout compatibility and electrical parameter alignment.
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