BSC097N06NSTATMA1

Single FETs, MOSFETs Overview

The BSC097N06NSTATMA1 is an N-channel OptiMOS power transistor rated for 60 V drain-source voltage. It features a maximum on-state resistance of 9.7 mΩ and supports a continuous drain current of 48 A at 25°C case temperature. The device operates within a junction temperature range of -55°C to 175°C. Key dynamic parameters include a total gate charge of 12 nC, output charge of 14 nC, and switching times of 2 ns for both rise and fall. It utilizes the PG-TDSON-8 package with a thermal resistance from junction to case of 3.5 K/W.

Single FETs, MOSFETs Feature Summary

• Optimized for high-performance synchronous rectification in switch-mode power supplies
• Rated for 175°C operation with 100% avalanche testing
• Superior thermal resistance characteristics
• Lead-free plating compliant with RoHS and halogen-free standards

Single FETs, MOSFETs Applications

• Synchronous rectification in switch-mode power supplies
• High-efficiency DC-DC converters
• Automotive power management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code suffix against official Infineon documentation to confirm exact packaging and tape-and-reel specifications. Ensure compatibility with JEDEC moisture sensitivity levels and confirm that the component meets target application requirements before final procurement decisions are made.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low conduction losses and high thermal stability. The 175°C rating allows for operation in demanding environments. Evaluate the 9.7 mΩ RDS(on) against system efficiency targets and ensure the 48 A continuous current capability aligns with peak load requirements.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS family of power transistors designed by Infineon Technologies. It represents a specialized solution for 60 V applications, balancing low on-resistance with robust thermal performance. The technology focuses on minimizing switching losses while maintaining reliability under high-stress conditions.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 60 V rating, PG-TDSON-8 package, and similar RDS(on) and thermal characteristics. Verify pinout compatibility and ensure equivalent avalanche energy ratings for reliable replacement in existing designs.