BSC098N10NS5ATMA1

Single FETs, MOSFETs Overview

The BSC098N10NS5ATMA1 is an N-channel OptiMOS™ 5 power transistor with a drain-source voltage of 100 V and a maximum on-state resistance of 9.8 mΩ at VGS=10 V. It supports a continuous drain current of 60 A at TC=25 °C and a pulsed current of 240 A. The device features a total gate charge of 22 nC, output charge of 30 nC, and thermal resistance from junction to case of 1.1 K/W. Packaged in PG-TDSON-8 (SuperSO8), it operates within a temperature range of -55 °C to 150 °C.

Single FETs, MOSFETs Feature Summary

• Optimized for high-performance synchronous rectification in switching mode power supplies.
• Features superior thermal resistance and optimized package design for efficient heat dissipation.
• Undergoes 100% avalanche testing to ensure robustness against transient energy events.

Single FETs, MOSFETs Applications

• Synchronous rectification in high-performance switching mode power supplies.
• DC-DC converter circuits requiring low on-resistance and fast switching characteristics.
• Power management systems utilizing the SuperSO8 surface-mount package.

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code suffix ATMA1 to confirm reel packaging requirements. Ensure compatibility with PG-TDSON-8 footprint dimensions during PCB layout. Confirm that the application environment remains within the specified operating temperature range of -55 °C to 150 °C. Validate thermal management strategies against the provided junction-to-case resistance values.

Single FETs, MOSFETs Selection Notes

Select this component when a 100 V rating and low RDS(on) are required for synchronous rectification. Consider the 60 A continuous current capability relative to the thermal conditions of the target application. Evaluate the 22 nC gate charge for drive circuit compatibility. Compare thermal performance metrics against alternative packages if space constraints differ.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon OptiMOS™ 5 family, designed for high-efficiency power conversion. It utilizes silicon technology within a PG-TDSON-8 surface-mount package. The series emphasizes low conduction losses and robust avalanche behavior for demanding power electronics applications.

Single FETs, MOSFETs Replacement Considerations

Consult official replacement lists for direct equivalents. Verify pinout compatibility and electrical parameters such as RDS(on) and VDS before substitution.

Single FETs, MOSFETs FAQ

Is the BSC098N10NS5 qualified according to JEDEC standards?

Yes, the device is qualified according to JEDEC standards for target applications.

What is the maximum single-pulse avalanche energy for this transistor?

The maximum single-pulse avalanche energy is 39 mJ when ID=50 A and RGS=25 Ω.