BSC100N03MSGATMA1

$0.96

Description：MOSFET N-CH 30V 12A/44A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:81e7e8e83662 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC100N03MSGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 12A/44A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC100N03MSGATMA1

Description：MOSFET N-CH 30V 12A/44A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：12A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：10mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：23 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1700 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 30W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8-5
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC100N03MSGATMA1

BSC100N03MSGATMA1

Single FETs, MOSFETs Overview

The BSC100N03MSGATMA1 is an N-channel OptiMOS™3 M-Series Power-MOSFET in a PG-TDSON-8 package. It features a drain-source voltage of 30 V and a continuous drain current of 44 A at Tc=25°C. The maximum on-resistance is 10 mΩ at VGS=10V and 12 mΩ at VGS=4.5V. Total gate charge is 23 nC at VGS=10V. Thermal resistance junction-to-case is 4.1 K/W via the bottom pad. Operating temperature range spans -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Optimized for 5V driver applications including notebooks, VGA circuits, and point-of-load converters
Features low figure of merit for switching (FOMSW) suitable for high-frequency synchronous rectification
Includes monolithically integrated reverse diode with avalanche testing

Single FETs, MOSFETs Applications

Notebook power management systems
Video graphics array (VGA) power stages
Point-of-load (POL) DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized Infineon channels or certified distributors. Confirm datasheet revision matches procurement requirements. Ensure storage conditions comply with moisture sensitivity level specifications prior to soldering. Validate RoHS compliance documentation if required by target market regulations.

Single FETs, MOSFETs Selection Notes

Select this component when low on-resistance at 4.5V gate drive is critical for efficiency. The PG-TDSON-8 package provides superior thermal dissipation compared to standard SO-8 types. Consider the specific gate charge requirements for high-frequency switching designs where fast transition times are necessary.

Single FETs, MOSFETs Part Context

This device belongs to the OptiMOS™3 M-Series family designed for low-voltage synchronous rectification. It utilizes Infineon's trench technology to achieve high performance within a compact surface-mount footprint. The series targets applications requiring efficient power conversion with minimal conduction losses.