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BSC100N10NSFGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 11.4/90A 8TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC100N10NSFGATMA1
- Description：MOSFET N-CH 100V 11.4/90A 8TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：11.4A (Ta), 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：10mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 110µA
- Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2900 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：156W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-1
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC100N10NSFGATMA1
Single FETs, MOSFETs Overview
The BSC100N10NSFGATMA1 is an N-channel enhancement mode power MOSFET from Infineon Technologies, utilizing OptiMOS 2 technology. It features a 100 V drain-source voltage rating and a continuous drain current of 90 A at 25°C. The device offers a maximum on-resistance of 10 mΩ at 10 V gate drive. Packaged in a TDSON-8 surface-mount format, it supports a junction temperature range from -55°C to +150°C with a power dissipation capacity of 156 W.
Single FETs, MOSFETs Feature Summary
- OptiMOS 2 technology integration for optimized switching performance
- Low on-state resistance for efficient conduction
- Enhanced thermal stability within specified operating ranges
Single FETs, MOSFETs Applications
- DC-DC converter circuits
- Motor control applications
- Power supply output stages
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and tape-and-reel specifications. Ensure component authenticity through authorized distribution channels. Confirm RoHS compliance status and REACH SVHC declarations prior to procurement. Validate that the requested part number matches the exact electrical characteristics required for the design.
Single FETs, MOSFETs Selection Notes
Select this component when a balance between low on-resistance and manageable gate charge is required for 100 V applications. Consider the TDSON-8 package for space-constrained designs requiring surface mount assembly. Evaluate thermal management requirements based on the 156 W power dissipation rating and ensure adequate PCB copper area for heat sinking.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS 2 family of N-channel power MOSFETs designed for general-purpose switching applications. It represents an earlier generation compared to newer OptiMOS iterations, focusing on cost-effective solutions for standard voltage levels. The TDSON-8 package provides a compact footprint suitable for modern electronic equipment manufacturing.
Single FETs, MOSFETs Replacement Considerations
Direct replacements include other Infineon OptiMOS 2 devices with similar ratings such as BSC070N10NS3G or BSC160N10NS3-G, provided pinout compatibility and electrical parameters align with the original design requirements.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
