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BSC105N10LSFGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 11.4/90A 8TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC105N10LSFGATMA1
- Description：MOSFET N-CH 100V 11.4/90A 8TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：11.4A (Ta), 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：10.5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 110µA
- Gate Charge (Qg) (Max) @ Vgs：53 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3900 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：156W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-1
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC105N10LSFGATMA1
Single FETs, MOSFETs Overview
The BSC105N10LSFGATMA1 is an N-Channel Power MOSFET from Infineon Technologies, part of the OptiMOS family. It features a maximum drain-source voltage (Vds) of 100 V and a continuous drain current (Id) of 11.4 A at ambient temperature, rising to 90 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 10.5 mΩ at 10 V gate drive. It is housed in a surface-mount PG-TDSON-8 package with a thermal resistance (RthJC) of 1.1 K/W and supports a maximum power dissipation of 156 W at case temperature.
Single FETs, MOSFETs Feature Summary
- OptiMOS technology provides low on-resistance for high efficiency
- Enhanced thermal performance via PG-TDSON-8 package design
- Robust avalanche capability for reliable operation
Single FETs, MOSFETs Applications
- DC-DC converter modules
- Motor control applications
- Power supply output stages
Single FETs, MOSFETs Procurement Notes
Verify the complete ordering code including the ATMA1 suffix to ensure correct tape-and-reel packaging configuration. Confirm RoHS compliance status through official Infineon documentation prior to integration. Cross-reference the specific datasheet version to validate electrical parameters against your system requirements.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring 100 V blocking voltage with moderate current handling capabilities. The PG-TDSON-8 package offers a compact footprint suitable for space-constrained designs. Evaluate thermal management strategies based on the specified RthJC value to maintain junction temperatures within safe operating limits during continuous operation.
Single FETs, MOSFETs Part Context
This part belongs to the Infineon OptiMOS power transistor series, designed for general-purpose switching applications. The OptiMOS portfolio emphasizes low conduction losses and improved thermal characteristics compared to standard MOSFETs. The BSC105N10LSFGATMA1 represents a specific variant optimized for surface-mount assembly in industrial and consumer electronics.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes such as BSC105N10LSF or other OptiMOS devices with identical pinout and similar electrical ratings. Ensure any replacement matches the PG-TDSON-8 package dimensions and thermal properties to avoid PCB redesign.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
