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BSC110N15NS5SCATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH >=100V. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC110N15NS5SCATMA1
- Description：TRENCH >=100V
- Series：OptiMOS™ 5
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：8V, 10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 38A, 10V
- Vgs(th) (Max) @ Id：4.6V @ 91µA
- Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2770 pF @ 75 V
- FET Feature：-
- Power Dissipation (Max)：125W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-7
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC110N15NS5SCATMA1
Single FETs, MOSFETs Overview
The BSC110N15NS5SCATMA1 is an OptiMOS™ 5 N-channel power transistor rated for 150 V drain-source voltage. It features a maximum on-resistance of 11 mΩ and supports a continuous drain current of 77 A at 25 °C. The device utilizes a PG-VSON-8 or PG-WSON-8 dual-side cooled package, providing a thermal resistance from junction to case bottom of 0.6 K/W. Key dynamic parameters include a total gate charge of 28 nTypical and a reverse recovery charge of 46 nTypical.
Single FETs, MOSFETs Feature Summary
- Dual-side cooled package design enabling lowest junction-to-top thermal resistance
- Optimized figure of merit combining low on-resistance with minimal gate charge
- Qualified for industrial applications per JEDEC standards
- Capable of operating up to 175 °C junction temperature
Single FETs, MOSFETs Applications
- High-frequency switching circuits
- Synchronous rectification modules
- Industrial power conversion systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the component meets all relevant JEDEC reliability standards required for the target industrial application environment before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when high efficiency in synchronous rectification is required due to its optimized FOM. Ensure the PCB layout accommodates the dual-side cooling requirements to achieve the specified thermal performance. Verify that the gate drive circuitry can handle the specified gate charge characteristics effectively.
Single FETs, MOSFETs Part Context
This part belongs to the Infineon OptiMOS™ 5 family, designed for robust industrial performance. It represents a generation of trench MOSFETs focused on reducing conduction losses while maintaining fast switching speeds within compact surface-mount packages suitable for dense board layouts.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical package dimensions and pinout compatibility.
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