ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 20A 8TDSON
- Series：OptiMOS™ T2
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Rds On (Max) @ Id, Vgs：11.2mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 28µA
- Gate Charge (Qg) (Max) @ Vgs：55nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：4020pF @ 30V
- Power - Max：65W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PG-TDSON-8-4
- Grade：-
- Qualification：-
Download product information
Overview
The BSC112N06LDATMA1 is a single N-channel Power MOSFET from Infineon Technologies, belonging to the OptiMOS™ 5 product family. It utilizes silicon technology and is housed in a TSON-8 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 60 V and a continuous drain current (Id) of 112 A at 25°C. Its maximum on-resistance (Rds(on)) is specified at 1.1 milliohms. The gate threshold voltage ranges from 1.3 V to 2.3 V, with a typical gate charge of 14 nC. It supports an operating temperature range from -55°C to +175°C.
Feature Summary
- Logic-level gate drive capability for direct interface with standard logic controllers
- OptiMOS™ 5 technology providing optimized trade-off between conduction and switching losses
- Enhanced thermal performance through low thermal resistance design
Applications
- Synchronous rectification in DC/DC converters
- Motor control applications
- Power distribution units
Procurement Notes
Verify the complete part number including the suffix ATMA1 to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status via the official datasheet before integration. Cross-reference the specific revision level to match PCB footprint and electrical characteristics exactly.
Selection Notes
Select this component when a low on-resistance and high current capacity are required in a compact TSON-8 footprint. The logic-level gate threshold simplifies driver circuit design compared to standard threshold devices. Ensure the application's thermal management can handle the power dissipation associated with the specified continuous current rating.
Part Context
This part belongs to the BSC012N/BSC112N series of OptiMOS™ 5 transistors designed for high-efficiency power switching. It serves as a modern replacement for older OptiMOS generations, offering improved figure-of-merit values. The TSON-8 package allows for higher density mounting compared to traditional SuperSO8 packages.
Replacement Considerations
Direct replacements include BSC012N06NSATMA1 and BSC110N06NS3GATMA1, provided pin compatibility and electrical ratings meet the specific design requirements.
