BSC120N03MSGATMA1

$0.57

Description：MOSFET N-CH 30V 11A/39A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1a22f3b06dea Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC120N03MSGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 11A/39A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC120N03MSGATMA1

Description：MOSFET N-CH 30V 11A/39A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：11A (Ta), 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：12mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1500 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 28W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8-5
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC120N03MSGATMA1

BSC120N03MSGATMA1

Single FETs, MOSFETs Overview

The BSC120N03MSGATMA1 is an N-channel OptiMOS™ 3 M-Series Power-MOSFET manufactured by Infineon Technologies. It features a PG-TDSON-8 package and operates within a temperature range of -55 °C to 150 °C. Key electrical parameters include a drain-source breakdown voltage (VDS) of 30 V, a continuous drain current (ID) of 39 A at TC=25 °C, and a maximum on-resistance (RDS(on)) of 14 mΩ at VGS=4.5 V. The device has a total gate charge (QG) of 10 nC at VGS=10 V and supports a pulsed drain current of 156 A.

Single FETs, MOSFETs Feature Summary

Optimized for 5V driver applications such as notebooks, VGA circuits, and point-of-load converters.
Features low figure of merit for switching (FOMSW) suitable for high-frequency synchronous buck converters.
Includes 100% avalanche testing for enhanced ruggedness.

Single FETs, MOSFETs Applications

Notebook power management
VGA power supplies
Point-of-load (POL) converters

Single FETs, MOSFETs Procurement Notes

Verify the component against official datasheets to confirm authenticity and specifications. Ensure compatibility with target operating temperatures and thermal requirements. Check for RoHS compliance and halogen-free status if required by project standards. Confirm package type matches design constraints.

Single FETs, MOSFETs Selection Notes

Select this MOSFET for designs requiring low RDS(on) at 4.5V gate drive voltages. Consider its optimized FOMSW for high-frequency switching efficiency. Evaluate thermal resistance characteristics for heat dissipation needs in compact PCB layouts.

Single FETs, MOSFETs Part Context

This component belongs to Infineon's OptiMOS™ 3 M-Series, designed for low-voltage, high-current applications. It utilizes advanced silicon technology to achieve superior performance in small surface-mount packages, targeting portable electronics and efficient power conversion systems.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference tools or manufacturer documentation for verified substitute part numbers. Ensure any replacement maintains equivalent electrical ratings and package dimensions.