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BSC120N12LSGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH >=100V PG-TDSON-8. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC120N12LSGATMA1
- Description：TRENCH >=100V PG-TDSON-8
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：120 V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta), 68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：12mOhm @ 34A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 72µA
- Gate Charge (Qg) (Max) @ Vgs：51 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4900 pF @ 60 V
- FET Feature：-
- Power Dissipation (Max)：114W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC120N12LSGATMA1
Single FETs, MOSFETs Overview
The BSC120N12LSGATMA1 is an N-channel enhancement-mode power MOSFET from the Infineon OptiMOS 3 series. It features a maximum drain-source voltage of 120 V and a continuous drain current of 68 A at 25°C, with a pulsed current rating of 274 A. The device utilizes a SuperSO8 5x6 surface-mount package. Key electrical parameters include a maximum on-resistance of 12 mΩ at 10 V gate drive and 14.2 mΩ at 4.5 V. Typical gate charge is 51 nC at 10 V, and the gate threshold voltage ranges from 1.2 V to 2.4 V. Maximum power dissipation is 114 W, operating within a temperature range of -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- Optimized low on-resistance for high efficiency in logic-level applications
- Designed for robust performance in small surface-mount packages
- Enhanced switching characteristics suitable for high-frequency operation
Single FETs, MOSFETs Applications
- DC-DC converter modules
- Motor control circuits
- Power supply output stages
Single FETs, MOSFETs Procurement Notes
Verify the complete part number against official Infineon documentation to ensure correct suffix identification. Confirm that the specific ordering code matches the required tape-and-reel packaging configuration. Cross-reference datasheet revisions to validate parameter consistency before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component when a 120 V rating is required alongside low conduction losses in a compact footprint. Evaluate thermal management requirements based on the 114 W dissipation limit. Ensure the driving circuit provides sufficient gate voltage to maintain the specified low on-resistance levels during operation.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS 3 family, representing Infineon's third-generation trench technology for power MOSFETs. The series focuses on balancing low on-resistance with fast switching speeds. The SuperSO8 package provides improved thermal performance compared to traditional through-hole options while maintaining a small board area.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference tools for verified substitutes. Ensure any replacement maintains the 120 V breakdown voltage and compatible pinout configuration.
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