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BSC123N08NS3GATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 80V 11A/55A TDSON. Review the specifications below when checking this part for your BOM.
The BSC123N08NS3GATMA1 is an N-channel enhancement mode power MOSFET from Infineon's OptiMOS 3 family, housed in a TSDSON-8 surface-mount package. It features a drain-source voltage rating of 80 V and a continuous drain current capacity of 40 A at 25 °C. The device exhibits a maximum on-state resistance of 10.3 mΩ at a gate-source voltage of 10 V. Key switching parameters include a total gate charge of 25 nC, with rise and fall times of 18 ns and 4 ns respectively. It operates within a temperature range of -55 °C to +150 °C and supports a power dissipation of 66 W.
Verify the complete part number including suffixes such as 'G' for RoHS compliance and 'ATMA1' for reel packaging specifications. Confirm that the component matches the specific datasheet revision required for your design. Ensure the ordering information aligns with the manufacturer's official documentation to avoid discrepancies in electrical characteristics or package dimensions.
Select this component when a balance between low conduction losses and fast switching speeds is required in a small form factor. The 80 V rating suits low-voltage DC systems. Evaluate the thermal requirements based on the 66 W dissipation limit and the specific PCB layout capabilities for the TSDSON-8 package to ensure reliable operation under load.
This component belongs to the OptiMOS 3 series, designed for general-purpose power switching. It utilizes silicon technology to provide high reliability and consistent performance. The TSDSON-8 package is optimized for automated surface-mount assembly, making it suitable for high-volume manufacturing environments requiring compact power solutions.
Consult official replacement guides for compatible parts within the same voltage and current class. Verify pinout compatibility and thermal characteristics before substituting with other manufacturers' devices or different Infineon series to ensure circuit integrity.
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