BSC12DN20NS3GATMA1

$1.56

Description：MOSFET N-CH 200V 11.3A 8TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2b26093c5c33 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC12DN20NS3GATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 200V 11.3A 8TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC12DN20NS3GATMA1

Description：MOSFET N-CH 200V 11.3A 8TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：125mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id：4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs：8.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：680 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：50W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8-5
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC12DN20NS3GATMA1

BSC12DN20NS3GATMA1

Single FETs, MOSFETs Overview

The BSC12DN20NS3GATMA1 is an N-channel enhancement mode power MOSFET from the OptiMOS 3 series. It features a PG-TDSON-8 surface-mount package with 8 pins. Key electrical parameters include a drain-source voltage of 200 V, continuous drain current of 11.3 A at 25°C, and maximum on-resistance of 125 mΩ. The device supports a junction temperature range of -55°C to +150°C, with a total power dissipation of 50 W.

Single FETs, MOSFETs Feature Summary

Optimized for DC-DC conversion applications
Low on-resistance RDS(on) characteristics
Excellent gate charge x RDS(on) figure of merit
Qualified according to JEDEC standards

Single FETs, MOSFETs Applications

DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure component authenticity by checking manufacturer markings and datasheet revision levels. Confirm RoHS compliance and halogen-free status requirements match project specifications before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage handling up to 200 V in compact surface-mount layouts. Evaluate thermal management needs based on the specified junction-to-case thermal resistance. Consider the low gate charge for efficient switching performance in power supply circuits where minimizing drive losses is critical.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS 3 family of power transistors designed by Infineon Technologies. The series focuses on optimizing the trade-off between switching speed and conduction losses. The PG-TDSON-8 package provides a balance between thermal performance and board space efficiency for modern electronic equipment.