BSC150N03LDGATMA1

Overview

The BSC150N03LDGATMA1 is a dual N-channel logic-level power MOSFET from Infineon's OptiMOS™ 3 series, housed in a PG-TDSON-8 package. It features a drain-source breakdown voltage of 30 V and a continuous drain current of 20 A at 25 °C case temperature. The maximum on-resistance (RDS(on)) is 15 mΩ at VGS=10 V and 22 mΩ at VGS=4.5 V. Total gate charge is typically 6.4 nC at VGS=10 V. Thermal resistance from junction to case is 4.9 K/W via the bottom pad. Operating and storage temperatures range from -55 °C to +150 °C.

Feature Summary

• Dual N-channel configuration for synchronous rectification applications
• Optimized technology specifically designed for DC/DC converters
• Superior thermal resistance with bottom-side cooling capability
• Qualified according to JEDEC standards for target applications

Applications

• Switching Mode Power Supplies (SMPS)
• DC/DC Converters
• Synchronous Rectification

Procurement Notes

Verify the component against the official Infineon datasheet revision 1.4 to confirm electrical parameters and package dimensions. Ensure the ordering suffix matches the required reel quantity and tape-and-reel specifications. Confirm RoHS compliance and halogen-free status as per IEC61249-2-21 requirements before finalizing procurement orders.

Selection Notes

Select this component for designs requiring low on-resistance and fast switching in compact spaces. The dual-channel architecture supports efficient synchronous rectifier topologies. Evaluate thermal management needs based on the specified junction-to-case resistance. Verify that the logic-level gate drive compatibility aligns with the controller's output voltage levels for optimal performance.

Part Context

This part belongs to the OptiMOS™ 3 family of power transistors, which are silicon-based N-channel devices. The series is characterized by excellent gate charge versus on-resistance product figures of merit. These components are engineered to provide high efficiency and reliability in power conversion circuits.

Replacement Considerations

Direct replacements must match the PG-TDSON-8 footprint and dual N-channel configuration. Verify that substitute parts meet or exceed the 30 V breakdown voltage and 20 A current ratings. Check thermal resistance values to ensure equivalent heat dissipation capabilities.

FAQ

Is the BSC150N03LDGATMA1 avalanche tested?

Yes, the device is qualified with 100% avalanche testing.

What is the maximum operating junction temperature?

The maximum operating and storage temperature range is -55 °C to +150 °C.

Does the package support bottom-side cooling?

Yes, the PG-TDSON-8 package includes a thermal pad for bottom-side cooling with a junction-to-case thermal resistance of 4.9 K/W.