BSC152N10NSFG

Single FETs, MOSFETs Overview

The BSC152N10NSFG is an N-channel Power MOSFET from Infineon’s OptiMOS family, housed in a PG-TDSON-8 surface-mount package. It features a drain-source voltage (Vds) of 100 V and a continuous drain current (Id) of 9.4 A at case temperature (Tc). The device exhibits a maximum on-resistance (Rds(on)) of 16 mΩ at Vgs = 10 V. Key electrical parameters include a gate charge (Qg) of 19 nC typical at 10 V, a threshold voltage (Vgs(th)) of 2.7 V, and a power dissipation (Ptot) of 114 W at Tc. The operating junction temperature range spans from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Optimized for DC-DC conversion applications with very low gate charge to support high-frequency switching operations.
• Utilizes OptiMOS technology to achieve an excellent figure of merit through minimized gate charge and on-resistance product.
• Designed as a single N-channel enhancement mode transistor with normal level gate drive requirements.

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• High-frequency synchronous rectification
• General purpose power switching

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'G' indicates RoHS compliance when sourcing. Confirm the package designation matches PG-TDSON-8 for thermal and mechanical fit. Ensure the supplier provides official datasheets referencing Rev. 2.08 or later to validate the 9.4 A/63 A current ratings. Cross-reference the manufacturer part number to avoid confusion with similar OptiMOS variants.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 100 V blocking capability with moderate current handling up to 9.4 A. The low Qg of 19 nC makes it suitable for high-efficiency, high-frequency topologies where gate drive losses are critical. Compare Rds(on) against thermal constraints to ensure adequate heat sinking within the specified -55 °C to +150 °C operating range.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS series, which integrates advanced trench gate technology for improved switching performance. It is designed to replace older planar MOSFETs in power supply applications, offering lower conduction and switching losses. The PG-TDSON-8 package provides robust thermal performance for surface-mount assembly processes.

Single FETs, MOSFETs Replacement Considerations

Check pinout compatibility with existing PCB layouts. Verify that substitute devices maintain the same 100 V rating and comparable Rds(on) values. Ensure the replacement supports the required 150 °C junction temperature limit and fits the TDSON-8 footprint.