Single FETs, MOSFETs BSC160N15NS5ATMA1 product image

BSC160N15NS5ATMA1

$2.09
  • Description:MOSFET N-CH 150V 56A TDSON
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:306bd53f5bb0 Category: Brand:

  
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BSC160N15NS5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 150V 56A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC160N15NS5ATMA1

  • Description:MOSFET N-CH 150V 56A TDSON
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):150 V
  • Current - Continuous Drain (Id) @ 25°C:56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):8V, 10V
  • Rds On (Max) @ Id, Vgs:16mOhm @ 28A, 10V
  • Vgs(th) (Max) @ Id:4.6V @ 60µA
  • Gate Charge (Qg) (Max) @ Vgs:23.1 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1820 pF @ 75 V
  • FET Feature:-
  • Power Dissipation (Max):96W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TDSON-8-7
  • Package / Case:8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC160N15NS5ATMA1

BSC160N15NS5ATMA1

Single FETs, MOSFETs Overview

The BSC160N15NS5ATMA1 is an N-channel Power MOSFET from Infineon's OptiMOS 5 series, designed for high-efficiency switching applications. It features a 150 V drain-source voltage rating and a continuous drain current of 56 A at case temperature. The device exhibits a maximum on-resistance of 16 mΩ at 10 V gate drive. Packaged in a PG-TDSON-8-7 (SuperSO8) surface-mount housing, it supports operation across a junction temperature range of -55°C to +150°C with a power dissipation capacity of 96 W.

Single FETs, MOSFETs Feature Summary

  • Integrates trench MOSFET technology for low conduction losses with planar MOSFET robustness for wide safe operating area performance.
  • Optimized gate charge characteristics facilitate fast switching speeds and reduced dynamic power losses.
  • Utilizes a compact, thermally efficient surface-mount package suitable for automated assembly processes.

Single FETs, MOSFETs Applications

  • Drone electronic speed controllers
  • Industrial motor control systems
  • High-efficiency DC-DC power conversion

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including the suffix ATMA1 to ensure correct packaging configuration. Confirm that the required voltage and current ratings align with the specific circuit design requirements before procurement. Check for RoHS compliance documentation if environmental regulations apply to the manufacturing process.

Single FETs, MOSFETs Selection Notes

Select this component when a balance between low on-resistance and high voltage blocking capability is required in a compact form factor. Consider the thermal management capabilities of the PG-TDSON-8-7 package relative to the expected power dissipation. Ensure the gate drive voltage is sufficient to achieve the specified low on-resistance values.

Single FETs, MOSFETs Part Context

This component belongs to the OptiMOS 5 family, which represents advanced silicon MOSFET technology from Infineon Technologies. The series focuses on improving efficiency and power density for various industrial and consumer electronics applications. The specific model integrates modern fabrication techniques to enhance performance metrics compared to previous generations.

Single FETs, MOSFETs Replacement Considerations

Direct replacements within the same series include BSC110N15NS5ATMA1 and BSC093N15NS5ATMA1, offering different current and resistance profiles while maintaining compatible packaging and voltage ratings.

BSC160N15NS5ATMA1BSC160N15NS5ATMA1
$2.09
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