BSC16DN25NS3GATMA1

$2.29

Description：MOSFET N-CH 250V 10.9A TDSON-8-5
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:17894c66cdbc Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC16DN25NS3GATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 250V 10.9A TDSON-8-5. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC16DN25NS3GATMA1

Description：MOSFET N-CH 250V 10.9A TDSON-8-5
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：250 V
Current - Continuous Drain (Id) @ 25°C：10.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：165mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id：4V @ 32µA
Gate Charge (Qg) (Max) @ Vgs：11.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：920 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：62.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8-5
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC16DN25NS3GATMA1

BSC16DN25NS3GATMA1

Single FETs, MOSFETs Overview

The BSC16DN25NS3GATMA1 is an N-channel enhancement-mode power MOSFET from the Infineon OptiMOS 3 series. It features a maximum drain-source voltage (Vds) of 250 V and a continuous drain current (Id) of 10.9 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 165 mΩ at a gate-source voltage of 10 V. Total gate charge (Qg) is typically 8.6 nC at 10 V, with a threshold voltage range of 2 V to 4 V. It operates within a junction temperature range of -55 °C to +150 °C and has a total power dissipation rating of 62.5 W. The component is housed in a surface-mount TSDSON-8 package.

Single FETs, MOSFETs Feature Summary

Optimized low on-resistance for high efficiency in power switching applications
Enhanced avalanche ruggedness for robust operation under transient conditions
Lead-free packaging compliant with RoHS standards

Single FETs, MOSFETs Applications

DC-DC converter circuits
Motor control systems
Power supply output stages

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including suffixes against official Infineon documentation to ensure correct package and tape/reel specifications. Confirm that the requested variant matches the required thermal resistance and electrical ratings for the specific application environment. Cross-reference datasheet revisions to validate parameter consistency before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 250 V breakdown voltage is required alongside moderate current handling capabilities. The low gate charge supports efficient driving in medium-frequency switching applications. Ensure the PCB layout accommodates the TSDSON-8 footprint and provides adequate copper area for thermal management to maintain performance within the specified operating temperature limits.

Single FETs, MOSFETs Part Context

This device belongs to the OptiMOS 3 family, designed for general-purpose power switching. It utilizes advanced trench technology to achieve a favorable balance between conduction losses and switching speed. The single N-channel configuration simplifies circuit design compared to dual or complementary arrangements, making it suitable for standard half-bridge or low-side switching topologies.