ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
BSC190N12NS3GATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 120V 8.6A/44A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC190N12NS3GATMA1
- Description：MOSFET N-CH 120V 8.6A/44A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：120 V
- Current - Continuous Drain (Id) @ 25°C：8.6A (Ta), 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：19mOhm @ 39A, 10V
- Vgs(th) (Max) @ Id：4V @ 42µA
- Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2300 pF @ 60 V
- FET Feature：-
- Power Dissipation (Max)：69W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-1
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC190N12NS3GATMA1
Single FETs, MOSFETs Overview
The BSC190N12NS3GATMA1 is a single N-channel Power MOSFET from Infineon's OptiMOS 3 series, housed in a TDSON-8 surface-mount package. It features a drain-source voltage rating of 120 V and supports a continuous drain current of 44 A at 25°C. The device exhibits a maximum on-resistance of 19 mΩ at a gate-source voltage of 10 V. Key switching parameters include a total gate charge of 26 nC, with rise and fall times of 16 ns and 4 ns respectively. It operates within a junction temperature range of -55°C to +150°C and has a power dissipation capacity of 69 W.
Single FETs, MOSFETs Feature Summary
- Optimized for high-frequency applications through minimized figure-of-merit (FOM) values.
- Enhanced thermal performance enabled by the TDSON-8 package design.
- Robust avalanche capability suitable for demanding switching environments.
Single FETs, MOSFETs Applications
- Synchronous rectification in server and communication power supplies
- High-efficiency DC-DC converters for industrial and automotive systems
- Intermediate bus architecture conversion stages
Single FETs, MOSFETs Procurement Notes
Verify component authenticity via official Infineon channels or authorized distributors. Confirm RoHS compliance status and check for the NRND (Not Recommended for New Designs) designation before finalizing procurement plans. Ensure packaging specifications match production requirements.
Single FETs, MOSFETs Selection Notes
Evaluate the trade-off between low on-resistance and gate charge for specific switching frequencies. Consider thermal management solutions given the 69 W dissipation limit. Verify that the 120 V rating provides adequate headroom for the target circuit topology.
Single FETs, MOSFETs Part Context
This component belongs to the OptiMOS 3 family, designed for efficient power switching. It utilizes silicon technology and is intended for compact, high-performance power electronics where size and efficiency are critical constraints.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official replacement guides for verified alternatives.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
