BSC196N10NSGATMA1

Single FETs, MOSFETs Overview

The BSC196N10NSGATMA1 is an N-channel power MOSFET from Infineon Technologies, part of the OptiMOS family. It features a drain-source voltage (Vds) of 100 V and a continuous drain current (Id) of 45 A at 25°C. The device has a maximum on-resistance (Rds(on)) of 19.6 mΩ at Vgs = 10 V. Key electrical parameters include a gate charge (Qg) of 25 nC, input capacitance (Ciss) of 1700 pF, and output capacitance (Coss) of 250 pF. It operates within a temperature range of -55°C to +150°C with a total power dissipation of 78 W.

Single FETs, MOSFETs Feature Summary

• Utilizes OptiMOS technology for optimized switching performance and low conduction losses.
• Features a SuperSO8 5x6 package designed for efficient thermal management and high power density.
• Provides robust avalanche energy capability for improved reliability in inductive load applications.

Single FETs, MOSFETs Applications

• DC-DC converters
• Motor control circuits
• Load switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'ATMA1' against official documentation to confirm tape-and-reel packaging details. Confirm RoHS compliance status via the manufacturer's datasheet. Check for any REACH SVHC declarations required for your region. Ensure the component matches the exact pinout and thermal characteristics specified for the SuperSO8 package in your design.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 100 V rating with moderate current handling up to 45 A. The low Rds(on) of 19.6 mΩ supports efficient power conversion. Consider the SuperSO8 package for space-constrained PCB layouts. Evaluate thermal resistance requirements based on the 78 W power dissipation rating and expected operating ambient temperatures.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS portfolio, which focuses on silicon-based power MOSFETs. The BSC196N10NSGATMA1 is specifically engineered for general-purpose power switching. It shares the SuperSO8 form factor with other devices in the series, facilitating standardized footprint planning across different voltage and current ratings within the same product line.

Single FETs, MOSFETs Replacement Considerations

Consult official replacement guides for direct substitutes. Verify that alternative components match the 100 V Vds, 45 A Id, and SuperSO8 package dimensions. Ensure equivalent Rds(on) and thermal performance metrics are met before substitution.