BSC200P03LSG

Single FETs, MOSFETs Overview

The BSC200P03LSG is a single N-channel power MOSFET from Infineon Technologies, belonging to the OptiMOS 3 product family. It utilizes silicon technology and is housed in a TDSON-8 surface-mount package. The device features a drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 100 A at 25°C. Its maximum on-resistance (Rds(on)) is specified as 2 mΩ. The gate-source voltage limits are ±20 V, with a typical threshold voltage of 1 V. Key dynamic parameters include a total gate charge (Qg) of 46 nC, a fall time of 4.7 ns, and a rise time of 5.1 ns. The component supports an operating temperature range from -55°C to +150°C and has a power dissipation rating of 69 W.

Single FETs, MOSFETs Feature Summary

• Optimized low on-resistance for high efficiency in power switching applications
• Enhanced thermal performance through advanced packaging design
• Fast switching characteristics suitable for high-frequency operation

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Motor control systems
• Power management modules

Single FETs, MOSFETs Procurement Notes

Verify the exact part number suffix against official Infineon documentation to ensure correct revision and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Check for any specific handling requirements related to moisture sensitivity levels before assembly.

Single FETs, MOSFETs Selection Notes

Select this component when a 30 V N-channel MOSFET with high current capability and low conduction losses is required. Compare Rds(on) and gate charge values against alternative devices to optimize switching speed and thermal management. Ensure the TDSON-8 footprint matches the PCB layout constraints and thermal pad requirements.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS 3 series, which represents Infineon's third-generation trench MOSFET technology. The series focuses on minimizing figure-of-merit metrics for improved system efficiency. Similar parts in the lineup vary primarily by current rating and on-resistance while maintaining the same package and voltage class.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the 30 V rating, 100 A current capacity, and TDSON-8 package dimensions. Verify that electrical parameters such as Rds(on) and Qg do not degrade system performance.