BSC200P03LSGAUMA1

Description：MOSFET P-CH 30V 9.9/12.5A 8TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:9d8b4e51336a Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC200P03LSGAUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 30V 9.9/12.5A 8TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC200P03LSGAUMA1

Description：MOSFET P-CH 30V 9.9/12.5A 8TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：9.9A (Ta), 12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：20mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id：2.2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：48.5 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：2430 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 63W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8-1
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC200P03LSGAUMA1

BSC200P03LSGAUMA1

Single FETs, MOSFETs Overview

The BSC200P03LS G is a P-channel enhancement mode power MOSFET from the OptiMOS-P series, designed for logic-level control. It features a PG-TDSON-8 surface-mount package and supports an operating temperature range of -55°C to +150°C. Key electrical parameters include a maximum drain-source voltage (VDS) of -30 V, a continuous drain current (ID) of -12.5 A at 25°C case temperature, and a maximum on-state resistance (RDS(on)) of 20 mΩ at VGS = -10 V. The device is avalanche rated with a single pulse avalanche energy (EAS) of -12.5 mJ.

Single FETs, MOSFETs Feature Summary

Logic level gate drive capability specifically optimized for notebook applications
Avalanche rated performance for robust operation under inductive load switching
Halogen-free construction compliant with IEC61249-2-21 standards

Single FETs, MOSFETs Applications

Notebook computer power management circuits
Low voltage DC-DC converter stages
Load switching applications requiring high efficiency

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm lead frame plating and tape-and-reel specifications. Confirm RoHS compliance status and halogen-free certification requirements prior to procurement. Ensure the component matches the exact PG-TDSON-8 marking code '200P03LS' to avoid substitution errors.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a P-channel solution with low RDS(on) and logic-level compatibility. Consider the thermal resistance values when designing PCB copper areas for heat dissipation. Evaluate the avalanche energy rating if the application involves significant inductive loads or potential voltage spikes.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS-P family of P-channel power transistors manufactured by Infineon Technologies. The OptiMOS technology focuses on minimizing conduction losses while maintaining fast switching characteristics suitable for portable electronics and battery-powered systems.