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BSC220N20NSFDATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 200V 52A TSON-8. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC220N20NSFDATMA1
- Description：MOSFET N-CH 200V 52A TSON-8
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：22mOhm @ 52A, 10V
- Vgs(th) (Max) @ Id：4V @ 137µA
- Gate Charge (Qg) (Max) @ Vgs：43 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3680 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：214W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSON-8-3
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC220N20NSFDATMA1
Single FETs, MOSFETs Overview
The BSC220N20NSFD is a single N-channel OptiMOS™3 power transistor rated for 200 V drain-source voltage. It features a maximum on-resistance of 22 mΩ and supports a continuous drain current of 52 A at 25 °C case temperature. The device utilizes a TSON-8-3 surface-mount package with three source pins and four drain pins. It operates within a junction temperature range of -55 °C to +175 °C and includes an integrated body diode.
Single FETs, MOSFETs Feature Summary
- Optimized gate charge and on-resistance product for high-frequency switching efficiency
- Robust avalanche energy capability for inductive load protection
- High reverse diode peak dv/dt rating for synchronous rectification applications
Single FETs, MOSFETs Applications
- High-frequency switching circuits
- Synchronous rectification stages
- Industrial motor control systems
Single FETs, MOSFETs Procurement Notes
Verify the component marking '220N20F' against the datasheet to confirm authenticity. Ensure the package matches the TSON-8-3 outline dimensions. Confirm RoHS compliance and lead-free plating status through official manufacturer documentation before integration into production.
Single FETs, MOSFETs Selection Notes
Select this component when a low on-resistance value is required alongside high breakdown voltage capabilities. Consider the thermal resistance characteristics and the specific package footprint constraints during PCB layout design. Evaluate the gate charge requirements against the driving circuit capabilities to ensure optimal switching performance.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's OptiMOS™3 family, designed specifically for power transistor applications requiring enhanced efficiency. The technology focuses on minimizing conduction losses while maintaining robust switching characteristics suitable for demanding industrial environments.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference lists for verified substitutes. Verify that any alternative component matches the 200 V rating, 22 mΩ maximum on-resistance, and TSON-8-3 package dimensions to ensure mechanical and electrical compatibility.
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