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BSC22DN20NS3GATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 200V 7A TDSON-8-5. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC22DN20NS3GATMA1
- Description：MOSFET N-CH 200V 7A TDSON-8-5
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：225mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 13µA
- Gate Charge (Qg) (Max) @ Vgs：5.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：430 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：34W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-5
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC22DN20NS3GATMA1
Single FETs, MOSFETs Overview
The BSC22DN20NS3GATMA1 is an N-channel enhancement mode power MOSFET from the OptiMOS 3 series. It features a PG-TDSON-8 surface-mount package with 8 pins. The device supports a maximum drain-source voltage of 200 V and a continuous drain current of 7.0 A at 25 °C case temperature. The maximum on-state resistance (RDS(on)) is 225 mΩ at VGS=10 V. Total gate charge is typically 4.2 nC at VGS=10 V. Power dissipation reaches 34 W at 25 °C, with a junction-to-case thermal resistance of 3.7 K/W. Operating temperature range spans -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- Optimized for DC-DC conversion applications
- Low on-resistance RDS(on) combined with excellent gate charge product
- Qualified according to JEDEC standards for target applications
Single FETs, MOSFETs Applications
- DC-DC converters
- Power management circuits
Single FETs, MOSFETs Procurement Notes
Verify the exact part number against official Infineon documentation before procurement. Confirm that the PG-TDSON-8 package matches your PCB footprint requirements. Ensure the component meets RoHS compliance and halogen-free specifications required by your manufacturing process. Cross-reference datasheet revision 2.2 for accurate electrical parameters.
Single FETs, MOSFETs Selection Notes
Select this component when a 200 V rating and 7 A continuous current capability are required in a compact surface-mount form factor. The low gate charge facilitates efficient switching in high-frequency DC-DC topologies. Verify that the thermal design accommodates the specified junction-to-case thermal resistance under expected load conditions.
Single FETs, MOSFETs Part Context
This component belongs to the OptiMOS 3 family of power transistors manufactured by Infineon Technologies. The series focuses on optimizing the figure of merit between gate charge and on-resistance for improved efficiency in power conversion systems. The specific model utilizes silicon technology within a lead-free, halogen-free construction.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon cross-reference tools or datasheets for verified substitute part numbers. Do not assume functional equivalence based solely on matching voltage or current ratings without verifying package dimensions and electrical characteristics.
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