BSC240N12NS3 G

Single FETs, MOSFETs Overview

The BSC240N12NS3 G is an N-channel Power MOSFET from Infineon Technologies, part of the OptiMOS 3 product family. It utilizes silicon technology and is housed in a TDSON-8 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 120 V and a continuous drain current (Id) of 37 A at 25°C. Key electrical characteristics include a maximum on-resistance (Rds(on)) of 24 mΩ at Vgs = 10 V, a gate charge (Qg) of 20 nC, and a threshold voltage (Vgs(th)) ranging from 2 V to 3.5 V. It supports a power dissipation of 66 W and operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• OptiMOS 3 technology provides optimized performance for low-voltage applications with high efficiency.
• Enhanced switching characteristics achieved through low gate charge and fast transition times.
• Robust thermal design allows for high power dissipation in compact surface-mount packaging.

Single FETs, MOSFETs Applications

• Low-voltage DC-DC converter circuits
• Synchronous rectification in power supplies
• Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official documentation. Check for obsolete status or lifecycle notices, as availability may be limited. Ensure storage conditions meet semiconductor handling standards to prevent damage prior to assembly.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 120 V rating with moderate current handling capabilities. Consider the TDSON-8 package for space-constrained PCB layouts. Evaluate thermal management requirements based on the specified power dissipation and junction-to-case thermal resistance. Compare gate charge specifications against driver capabilities to ensure efficient switching performance.

Single FETs, MOSFETs Part Context

This component belongs to Infineon's OptiMOS 3 series, designed for general-purpose power switching. It shares the TDSON-8 footprint with other devices in the family, such as BSC190N12NS3 G and BSZ240N12NS3 G, allowing for potential pin-compatible design variations within specific voltage and current constraints.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Designers should consult official Infineon resources for qualified alternatives if this obsolete component is required for replacement.

Single FETs, MOSFETs FAQ

What is the maximum drain-source voltage for the BSC240N12NS3 G?

The maximum drain-source voltage (Vds) is 120 V.

Is the BSC240N12NS3 G still in production?

According to available information, the BSC240N12NS3 G is classified as obsolete and no longer manufactured.