BSC252N10NSFGATMA1

$1.17

Description：MOSFET N-CH 100V 7.2A/40A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:134f863f14ea Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC252N10NSFGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 7.2A/40A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC252N10NSFGATMA1

Description：MOSFET N-CH 100V 7.2A/40A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：7.2A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：25.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 43µA
Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1100 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：78W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8-1
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC252N10NSFGATMA1

BSC252N10NSFGATMA1

Single FETs, MOSFETs Overview

The BSC252N10NSFGATMA1 is a single N-channel power MOSFET from the OptiMOS 2 family, manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a TDSON-8 surface-mount package. The device features a drain-source voltage rating of 100 V and a continuous drain current capability of 40 A at 25°C. Key electrical parameters include a maximum on-resistance of 19.5 mΩ at a gate-source voltage of 10 V, a typical gate charge of 17 nC, and a threshold voltage range of 2 V to 4 V. It supports an operating temperature range from -55°C to +150°C with a power dissipation rating of 78 W.

Single FETs, MOSFETs Feature Summary

OptiMOS 2 technology provides optimized performance for low-voltage switching applications.
Integrated thermal management capabilities within the TDSON-8 package design.
Enhancement mode operation suitable for high-efficiency power conversion circuits.

Single FETs, MOSFETs Applications

Automotive lighting systems
Industrial motor control drives
General-purpose power switching

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including the ATMA1 suffix to ensure correct tape-and-reel packaging configuration. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Check for any specific automotive qualification requirements if deploying in vehicle environments. Ensure static-sensitive handling procedures are followed during assembly.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a balance of low on-resistance and compact surface-mount footprint. The 100 V rating suits standard 12 V or 24 V system architectures. Evaluate thermal resistance characteristics against expected load currents to determine adequate heatsinking needs. Compare gate charge specifications against driver capabilities to optimize switching speed and efficiency.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS 2 portfolio, designed for cost-effective and reliable power switching. The TDSON-8 package offers improved thermal performance compared to traditional TO-252 packages while maintaining a small board area. It serves as a discrete solution for medium-current applications where integrated smart power switches may be oversized or unavailable.