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BSC265N10LSFGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 6.5A/40A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC265N10LSFGATMA1
- Description：MOSFET N-CH 100V 6.5A/40A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：6.5A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：26.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 43µA
- Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1600 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：78W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-1
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC265N10LSFGATMA1
Single FETs, MOSFETs Overview
The BSC265N10LSFGATMA1 is an N-channel power MOSFET from Infineon’s OptiMOS 2 series, designed for surface-mount applications in the PG-TDSON-8 package. It features a drain-source voltage (VDS) of 100 V and a continuous drain current (ID) of 40 A at case temperature. The device exhibits a maximum on-resistance (RDS(on)) of 26.5 mΩ. Power dissipation reaches 78 W at case temperature, with a maximum operating junction temperature of 150°C.
Single FETs, MOSFETs Feature Summary
- Utilizes Infineon's proprietary OptiMOS 2 technology to achieve low on-resistance and optimized switching performance.
- Engineered for high-efficiency power conversion with minimal conduction losses in compact surface-mount packages.
Single FETs, MOSFETs Applications
- DC-DC converter modules
- Synchronous rectification circuits
- Motor control applications
Single FETs, MOSFETs Procurement Notes
Verify the complete part number including the suffix ATMA1 to ensure correct tape-and-reel packaging configuration. Confirm that the required thermal management solution supports the specified 78 W dissipation rating at the intended case temperature. Ensure compatibility with the PG-TDSON-8 footprint during PCB layout validation.
Single FETs, MOSFETs Selection Notes
Select this component when a 100 V rating and 40 A current capacity are required in a small form factor. The low RDS(on) value makes it suitable for high-efficiency designs where conduction loss reduction is critical. Consider the thermal resistance characteristics of the TDSON package for heat dissipation planning in dense layouts.
Single FETs, MOSFETs Part Context
This device belongs to Infineon’s OptiMOS 2 family, which targets automotive and industrial power management. The SuperSO8/TDSON package provides a balance between electrical performance and board space efficiency. It serves as a standard solution for medium-power switching applications requiring robust reliability and low static losses.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other OptiMOS 2 devices offering similar 100 V/40 A specifications. Verify pinout compatibility and thermal pad dimensions before substituting. Ensure equivalent RDS(on) and gate charge parameters to maintain circuit performance integrity.
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