BSC320N20NS3GATMA1

Single FETs, MOSFETs Overview

The BSC320N20NS3GATMA1 is an N-channel enhancement-mode MOSFET from the OptiMOS 3 series, housed in a PG-TDSON-8 surface-mount package. It features a drain-source voltage (VDS) of 200 V and a continuous drain current (ID) of 36 A at 25°C case temperature. The maximum on-resistance (RDS(on)) is 32 mΩ at VGS=10 V and ID=36 A. Total gate charge (Qg) is typically 22 nC at VGS=10 V. Power dissipation reaches 125 W at 25°C, with an operating junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• Optimized for high-frequency switching and synchronous rectification applications
• Low on-resistance combined with excellent gate charge characteristics
• Qualified according to JEDEC standards for target applications
• Lead-free plating compliant with RoHS directives

Single FETs, MOSFETs Applications

• High-frequency switching circuits
• Synchronous rectification designs
• Power conversion systems requiring low conduction losses

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by checking the marking code '320N20NS' against official Infineon documentation. Confirm the package type matches the PG-TDSON-8 outline dimensions. Ensure compliance with environmental requirements such as halogen-free status per IEC61249-2-21. Cross-reference datasheet revision Rev. 2.4 for accurate electrical parameters before integration into final designs.

Single FETs, MOSFETs Selection Notes

Select this component when a 200 V rating and 36 A continuous current capability are required in a compact surface-mount form factor. The low RDS(on) minimizes conduction losses, while the optimized gate charge supports efficient high-speed operation. Consider thermal management strategies given the 125 W power dissipation limit at 25°C case temperature.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's OptiMOS 3 family, designed for power transistor applications. It utilizes silicon technology within a PG-TDSON-8 footprint, balancing performance with space constraints. The part is distinct from through-hole or larger surface-mount alternatives in the same voltage class due to its specific thermal and electrical profile.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 200 V rating, 36 A current capacity, and PG-TDSON-8 package. Verify pinout compatibility and thermal resistance values. Check if alternative parts meet the same JEDEC qualification and RoHS compliance standards required for the original design.

Single FETs, MOSFETs FAQ

What is the internal body diode configuration?

The device includes an internal body diode connected between the source and drain terminals.

How does the gate threshold voltage vary with temperature?

The gate threshold voltage decreases as the junction temperature increases, ranging from approximately 2 V to 4 V at 25°C.