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BSC350N20NSFDATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 200V 35A TDSON-8-1. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC350N20NSFDATMA1
- Description：MOSFET N-CH 200V 35A TDSON-8-1
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：35mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id：4V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2410 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：150W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-1
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC350N20NSFDATMA1
Single FETs, MOSFETs Overview
The BSC350N20NSFD is an N-channel, normal level OptiMOS™3 power transistor rated for a maximum drain-source voltage of 200 V. It features a maximum on-resistance of 35 mΩ and supports a continuous drain current of 35 A at 25 °C case temperature. The device operates within a junction temperature range of -55 °C to 175 °C and utilizes a PG-TDSON-8 surface-mount package.
Single FETs, MOSFETs Feature Summary
- Optimized gate charge and on-resistance product for high-frequency switching
- Designed specifically for synchronous rectification applications
- Qualified according to JEDEC standards for target applications
Single FETs, MOSFETs Applications
- High-frequency switching circuits
- Synchronous rectification modules
- Power conversion systems requiring low on-resistance
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code against the manufacturer's official documentation to ensure correct component selection. Confirm that the required package type matches the intended PCB footprint design. Check for any updated revision history regarding thermal characteristics or electrical parameters before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component based on its 200 V rating and 35 mΩ maximum on-resistance for efficient power handling. Consider the 175 °C operating temperature capability for high-thermal environments. Evaluate the PG-TDSON-8 package dimensions to ensure compatibility with the target assembly process and available board space constraints.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's OptiMOS™3 family of power transistors. These devices are engineered to provide excellent gate charge versus on-resistance figures of merit. The technology focuses on reducing conduction losses while maintaining robust switching performance in compact surface-mount packages.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon cross-reference lists for verified substitutes. Ensure replacement parts match the 200 V rating, 35 mΩ resistance, and PG-TDSON-8 package form factor.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
